? semiconductor components industries, llc, 2008 august, 2008 ? rev. 1 1 publication order number: NTUD3127C/d NTUD3127C small signal mosfet 20 v, 200 ma / ? 180 ma, complementary, 1.0 x 1.0 mm sot ? 963 package features ? complementary mosfet device ? 1.5 v gate voltage rating ? ultra thin profile (< 0.5 mm) allows it to fit easily into extremely thin environments such as portable electronics. ? these are pb ? free devices applications ? load switch with level shift ? optimized for power management in ultra portable equipment maximum ratings (t j = 25 c unless otherwise specified) parameter symbol value unit drain ? to ? source voltage v dss 20 v gate ? to ? source voltage v gs 8 v n ? channel continuous drain current (note 1) steady state t a = 25 c i d 160 ma t a = 85 c 115 t 5 s t a = 25 c 200 p ? channel continuous drain current (note 1) steady state t a = 25 c ? 140 t a = 85 c ? 100 t 5 s t a = 25 c ? 180 power dissipation (note 1) steady state t a = 25 c p d 125 mw t 5 s 200 pulsed drain current n ? channel t p = 10 s i dm 800 ma p ? channel ? 600 operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) (note 2) i s 200 ma lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface ? mounted on fr4 board using the minimum recommended pad size, 1 oz. cu. 2. pulse test: pulse width 300 s, duty cycle 2% marking diagram http://onsemi.com v (br)dss r ds(on) max i d max n ? channel 20 v 5.0 @ ? 4.5 v 7.0 @ ? 2.5 v ? 0.18 a p ? channel ? 20 v 3.0 @ 4.5 v 4.0 @ 2.5 v 0.20 a 10 @ ? 1.8 v 6.0 @ 1.8 v device package shipping ? ordering information ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. top view d 1 g 2 s 2 s 1 g 1 6 5 4 1 2 3 d 2 pinout: sot ? 963 NTUD3127Ct5g sot ? 963 (pb ? free) 8000 / tape & reel s = specific device code m = date code 14 @ ? 1.5 v 10 @ 1.5 v sot ? 963 case 527aa sm 1
NTUD3127C http://onsemi.com 2 thermal resistance ratings parameter symbol max unit junction ? to ? ambient ? steady state, minimum pad (note 3) r ja 1000 c/w junction ? to ? ambient ? t 5 s (note 3) 600 3. surface ? mounted on fr4 board using the minimum recommended pad size, 1 oz. cu. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol n/p test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss n v gs = 0 v i d = 250 a 20 v p i d = ? 250 a ? 20 zero gate voltage drain current i dss n v gs = 0 v, v ds = 5.0 v t j = 25 c 50 na t j = 85 c 200 p v gs = 0 v, v ds = ? 5.0 v t j = 25 c ? 50 t j = 85 c ? 200 zero gate voltage drain current i dss n v gs = 0 v, v ds = 16 v t j = 25 c 100 na p v gs = 0 v, v ds = ? 16 v ? 100 gate ? to ? source leakage current i gss n v ds = 0 v, v gs = 5.0 v 100 na p ? 100 on characteristics (note 4) gate threshold voltage v gs(th) n v gs = v ds i d = 250 a 0.4 1.0 v p i d = ? 250 a ? 0.4 ? 1.0 drain ? to ? source on resistance r ds(on) n v gs = 4.5 v, i d = 100 ma 1.5 3.0 p v gs = ? 4.5v, i d = ? 100 ma 4.0 5.0 n v gs = 2.5 v, i d = 50 ma 2.0 4.0 p v gs = ? 2.5v, i d = ? 50 ma 5.0 7.0 n v gs = 1.8 v, i d = 20 ma 3.0 6.0 p v gs = ? 1.8v, i d = ? 20 ma 6.5 10 n v gs = 1.5 v, i d = 10 ma 4.0 10 p v gs = ? 1.5 v, i d = ? 10 ma 7.5 14 n v gs = 1.2 v, i d = 1.0 ma 5.5 p v gs = ? 1.2 v, i d = ? 1.0 ma 11.5 forward transconductance g fs n v ds = 5.0 v, i d = 125 ma 0.35 s p v ds = ? 5.0 v, i d = ? 125 ma 0.26 charges, capacitances and gate resistance input capacitance c iss n f = 1 mhz, v gs = 0 v v ds = 15 v 9.0 pf output capacitance c oss 3.0 reverse transfer capacitance c rss 2.2 input capacitance c iss p f = 1 mhz, v gs = 0 v v ds = ? 15 v 12 output capacitance c oss 2.7 reverse transfer capacitance c rss 1.0 4. switching characteristics are independent of operating junction temperatures
NTUD3127C http://onsemi.com 3 electrical characteristics (t j = 25 c unless otherwise specified) parameter unit max typ min test condition n/p symbol switching characteristics, v gs = 4.5 v (note 4) turn ? on delay time t d(on) n v gs = 4.5 v, v dd = 10 v, i d = 200 ma, r g = 2.0 15 ns rise time t r 24 turn ? off delay time t d(off) 90 fall time t f 60 turn ? on delay time t d(on) p v gs = ? 4.5 v, v dd = ? 15 v, i d = ? 180 ma, r g = 2.0 20 rise time t r 37 turn ? off delay time t d(off) 112 fall time t f 97 drain ? source diode characteristics forward diode voltage v sd n v gs = 0 v, i s = 10 ma t j = 25 c 0.60 1.0 v p v gs = 0 v, i s = ? 10 ma ? 0.65 ? 1.0 4. switching characteristics are independent of operating junction temperatures
NTUD3127C http://onsemi.com 4 typical performance curves ? n ? channel t j = 125 c 0 v ds , drain ? to ? source voltage (volts) i d, drain current (amps) 0.2 0 figure 1. on ? region characteristics 3 0 figure 2. transfer characteristics v gs , gate ? to ? source voltage (volts) figure 3. on ? resistance vs. gate voltage r ds(on), drain ? to ? source resistance ( ) i d, drain current (amps) figure 4. on ? resistance vs. drain current and gate voltage i d, drain current (amps) ? 50 0 ? 25 25 1.25 0.25 0 50 150 figure 5. on ? resistance variation with temperature t j , junction temperature ( c) t j = 25 c t j = ? 55 c 75 t j = 25 c i d = 200 ma v gs = 4.5 v r ds(on), drain ? to ? source resistance (normalized) t j = 25 c r ds(on), drain ? to ? source resistance ( ) v gs = 2.5 v 1 figure 6. drain ? to ? source leakage current vs. voltage v ds , drain ? to ? source voltage (volts) v gs = 0 v i dss , leakage (na) t j = 150 c t j = 125 c 1.5 v v gs = 4.5 v v ds 5 v 12 1.0 v 0.2 4 20 v gs = 3 v to 5 v 0.3 125 100 5 1 10 v gs , gate ? to ? source voltage (volts) t j = 25 c i d = 200 ma 5 035 0 2 2.0 0.5 0 1.0 1.5 10 0 25 2 0.1 0.4 0.05 0.2 0.35 0.15 0.3 1 1000 2.5 v 0.4 0.4 0 15 2.5 100 1.0 1.75 0.5 0.75 1.5 16 48 0.1 2.0 v 0.1 4 0.3 0.25 34 1
NTUD3127C http://onsemi.com 5 typical performance curves ? n ? channel figure 7. capacitance variation figure 8. resistive switching time variation vs. gate resistance 1.0 0 v sd , source ? to ? drain voltage (volts) i s , source current (amps) v gs = 0 v t j = 25 c figure 9. diode forward voltage vs. current 0.8 0.4 0.1 gate ? to ? source or drain ? to ? source voltage (volts) r g , gate resistance (ohms) 1 10 100 100 1 t, time (ns) v dd = 10 v i d = 200 ma v gs = 4.5 v t r t d(on) 1000 t f t d(off) 0.05 0.15 c, capacitance (pf) 0 0.2 0.6 0.2 10 6 02 12 c iss c oss c rss 14 16 0 12 15 3 20 v gs = 0 v t j = 25 c 9 18 46810
NTUD3127C http://onsemi.com 6 typical performance curves ? p ? channel 3.0 v t j = 125 c 0 v ds , drain ? to ? source voltage (volts) i d, drain current (amps) 0.16 0 figure 10. on ? region characteristics 3 figure 11. transfer characteristics v gs , gate ? to ? source voltage (volts) figure 12. on ? resistance vs. gate voltage r ds(on), drain ? to ? source resistance ( ) i d, drain current (amps) figure 13. on ? resistance vs. drain current and gate voltage i d, drain current (amps) ? 50 0 ? 25 25 1.25 0.25 0 50 150 figure 14. on ? resistance variation with temperature t j , junction temperature ( c) t j = 25 c t j = ? 55 c 75 t j = 25 c i d = 180 ma v gs = 4.5 v r ds(on), drain ? to ? source resistance (normalized) t j = 25 c r ds(on), drain ? to ? source resistance ( ) v gs = 2.5 v 1 figure 15. drain ? to ? source leakage current vs. voltage v ds , drain ? to ? source voltage (volts) v gs = 0 v i dss , leakage (na) t j = 150 c t j = 125 c 1.5 v v gs = 4.5 v v ds 5 v 12 1.0 v 4 20 v gs = 3.5 v to 5 v 125 100 5 1 8 v gs , gate ? to ? source voltage (volts) t j = 25 c i d = 180 ma 4 035 0 2 4 1 0 2 3 10 0 25 2 0.1 0.4 0.05 0.2 0.35 0.15 0.24 1 1000 2.5 v 0.36 0 12 6 100 1.0 1.75 0.5 0.75 1.5 16 48 0.08 2.0 v 4 0.3 0.25 34 1 0.32 0.28 0.20 0.12 0.04 0.16 0 0.24 0.36 0.08 0.32 0.28 0.20 0.12 0.04 5
NTUD3127C http://onsemi.com 7 typical performance curves ? p ? channel figure 16. capacitance variation figure 17. resistive switching time variation vs. gate resistance 1.0 0 v sd , source ? to ? drain voltage (volts) i s , source current (amps) v gs = 0 v t j = 25 c figure 18. diode forward voltage vs. current 0.8 0.4 gate ? to ? source or drain ? to ? source voltage (volts) r g , gate resistance (ohms) 1 10 100 100 1 t, time (ns) v dd = 10 v i d = 180 ma v gs = 4.5 v t r t d(on) 1000 t f t d(off) 0.02 0.18 c, capacitance (pf) 0 0.6 0.2 10 0.04 0.06 0.08 0.10 0.12 0.14 0.16 02 12 c iss c oss c rss 14 16 0 12 16 4 20 v gs = 0 v t j = 25 c 8 18 46810
NTUD3127C http://onsemi.com 8 package dimensions sot ? 963 case 527aa ? 01 issue d *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* dim min nom max millimeters a 0.40 0.45 0.50 b 0.10 0.15 0.20 c 0.05 0.10 0.15 d 0.95 1.00 1.05 e 0.75 0.80 0.85 e 0.35 bsc l 0.05 0.10 0.15 0.95 1.00 1.05 h e e b e d c a l x 0.08 ? y ? ? x ? h e 6x y 12 3 4 5 6 0.016 0.018 0.020 0.004 0.006 0.008 0.002 0.004 0.006 0.037 0.039 0.041 0.03 0.032 0.034 0.014 bsc 0.002 0.004 0.006 0.037 0.039 0.041 min nom max inches notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 0.35 0.014 0.20 0.008 mm inches scale 20:1 0.90 0.0354 0.35 0.014 0.20 0.008 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 NTUD3127C/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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